[18p-431B-1~12] 【CS.7】 Code-sharing Session of 6.5 & 7.6

[18p-431B-6] Trench Formation for Releasing the Strain between Substrates and Epitaxial Films

〇Michiko Yoshitake¹, Shinjiro Yagyu¹, Toyohiro Chikyow¹ (1.NIMS)

Keywords:strain, epitaxial film, FIB fabrication

We developed the atomically flat epitaxial alumina film before, but the film has triangular defects which were formed due to the strain between the alumina and the substrate. The trenches have been fabrication in advance by FIB and the defects disappeared on alumina films on fabricated substrates.