[18p-432-1~9] Solid state ionics devices for super smart society. - From fundamentals to applications in ICT, AI and energy devices -

[18p-432-8] Electric dipole layer formation at interfaces of two oxides: physical origin and possible application

〇Koji Kita¹ (1.Univ. of Tokyo)

Keywords:Interface dipole layer, dielectric thin film, MOS devices

When high-k dielectric films are deposited on SiO₂, electric dipole layer appear at the oxide interfaces, to cause a MOFET threshold voltage shift in the order of ~ several hundreds of mV. Even though such a significant effect was not expected at all in the early stage of the development of high-k dielectrics, control of the effect is now one of the essential part of advanced LSI technology. In this talk, a quantitative model to describe the origin of dipole layer formation at the interface of electrostatistically inactive materials, and its possible applications based on the control of the dipole layer formation will be discussed.