The 79th JSAP Autumn Meeting, 2018

Presentation information

Poster presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[18p-PA2-1~20] 6.4 Thin films and New materials

Tue. Sep 18, 2018 1:30 PM - 3:30 PM PA (Event Hall)

1:30 PM - 3:30 PM

[18p-PA2-16] Fabrication of far-infrared filter consisting of Ge/Na3AlF6 using SiO cap layer

Koichi Muro1 (1.Asahi Spectra Co., Ltd.)

Keywords:optical filter, far infrared rays, evaporation

The optical filter uses light wave interference. As the target wavelength becomes longer, the optical film thickness becomes thicker, so problems such as peeling due to stress when a fabrication by evaporation. We found the effect of peeling suppression by SiO cap layer on the Na3AlF6 ultra-thick film constituting the far-infrared filter. And, by inserting SiO layer into a multilayer film consisting of Ge/Na3AlF6, suppression of peeling was confirmed. A filter for alternative freon (HFC) gas was fabricated, and gas imaging was achieved with thermal camera.