[18p-PA5-1~28] 12.4 Organic light-emitting devices and organic transistors

[18p-PA5-10] Trap Analysis of Printed Organic Transistors by Temperature-Dependent Measurement

〇(B)Tomohide Ueno¹, Rei Shiwaku¹, Hideki Wada¹, Takashi Fukuda², Daisuke Kumaki¹, Shizuo Tokito¹, Hiroyuki Matsui¹ (1.ROEL Yamagata Univ., 2.Tosoh Corporation)

Keywords:low temperature mesurement, phase separation, DTBDT-C6

In this study, the transfer characteristics of the printed organic field-effect transistors (OFETs) which can operate with ultralow voltages down to 0.3 V were measured at low temperatures (193 K- 293 K) to obtain the density of trap states. By blending small-molecular semiconductor with polymer insulator, the density of trap states was decreased by about one order. The resultant density of trap states was found comparable to rubrene single crystal OFETs.