The 79th JSAP Autumn Meeting, 2018

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Poster presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

Tue. Sep 18, 2018 4:00 PM - 6:00 PM PA (Event Hall)

4:00 PM - 6:00 PM

[18p-PA6-8] Characterization of plasma-induced defects in p-GaN

〇(M1)Tomoya Imai1, Seiji Nakamura1 (1.Tokyo Metropolitan Univ.)

Keywords:GaN, plasma-induced defects, PHCAP