[18p-PB1-1~73] 10 スピントロニクス・マグネティクス（ポスター）

▲ [18p-PB1-23] Magnetic interaction in magnetic tunnel junction array

〇Hitoshi Kubota¹、Minori Goto²、Kazuki Takahashi²、Kay Yakushiji¹、Tomohiro Taniguchi¹、Sumito Tsunegi¹、Atsushi Sugihara¹、Akio Fukushima¹、Yoshishige Suzuki^2,3 (1.AIST、2.Osaka Univ.、3.CSRN)

キーワード：magnetic tunnel junction array, magnetic interaction, magnetization process

We studied magnetic interaction between two magnetic tunnel junctions located closely. The junctions had a stacking structure of IrMn/CoFe/Ru/CoFeB/MgO/CoFeB/MgO/Ta, which was patterned into elliptical shape of 150 x 50 nm and 450 nm x 150 nm, aligned along the long axes. The separation between the cells were varied with 50 nm and 600 nm. With decreasing the separation MR loop shape changed from 2-step staircase representing individual magnetization reversal (separation>100 nm) to 1-step sharp transition representing collaborative magnetization reversal (separation < 100 nm). Magnetization reversal process in the pair of MTJ was greatly influenced by the magnetic interaction in short separation.