[18p-PB1-1~73] 10 Spintronics and Magnetics (Poster)

[18p-PB1-6] Mn doped InAs/GaSb grown by MBE toward 2D magnetic topological insulator

〇Takaito Ayabe¹, Shigeru Kaku¹, Junji Yoshino¹ (1.Tokyo Tech Inst.)

Keywords:topological insulator

Quantum anomalous Hall effect (QAH) was expected to be developed in Mn-doped InAs / GaSb in 2014, but it has not yet been experimentally demonstrated. (Bi, Sb) Te, research has progressed, but quantization conductivity has been successfully measured at extremely low temperatures. Therefore, as a new QAH expression candidate sample, we tried to prepare the new substance using LT-MBE. In the experiment, AlSb (500 nm) / InMnAs (20 nm) / GaMnSb (20 nm) was grown on a GaAs (001) substrate. Transport characteristics were examined by the Van der Pauw method and it was found that the material is p type ferromagnetic semiconductor and easy magnetization axes are perpendicular magnetic anisotropy.