[18p-PB1-1~73] 10 Spintronics and Magnetics (Poster)

▼ [18p-PB1-66] Magnetization dynamics at high S₂₁ condition in magnetic tunnel junction

〇Yuma Yamada¹, Minori Goto^1,4, Takekazu Yamane², Naomichi Degawa², Tuyoshi Suzuki², Atsushi Shimura², Susumu Aoki², Junichiro Urabe², Atsushi Ajioka², Shinji Miwa^1,3,4, Yoshishige Suzuki^1,4 (1.Osaka Univ., 2.TDK, 3.Univ. of Tokyo, 4.CSRN-Osaka)

Keywords:MTJ, RF amplifier, spintronics

Various radio-frequency(RF) devices, using a Magnetic tunnel junction (MTJ), have been developed including spin-torque oscillator and spin-torque diode. In addition to these devices, MTJ can be used as amplifier of RF signals. The amplification is excited by ferromagnetic resonance (FMR) with a direct current applying to MTJ. Recently, it is reported that the RF transport signal (S₁₁) from MTJ could be amplified by RF external magnetic field.In this study, we demonstrate the high S₂₁ value using MTJ and its physical mechanism.