[18p-PB2-1~7] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[18p-PB2-7] Development of Nickel Silicide formation mothod for Si-ULSI by using hydrogen radical heating

〇(DC)Hiroki Nakaie¹, Tetsuji Arai¹, Kazuki Kamimura¹, Kesuke Arimoto¹, Kosuke Hara¹, Mai Shirakura¹, Chiaya Yamamoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Toshiyuki Takamatsu² (1.Univ. of Yamanashi, 2.SST Inc.)

Keywords:Electrode formation, Nickel Silicide