[18p-PB3-1~95] 17 Nanocarbon Technology (Poster)

[18p-PB3-38] SWCNT growth below 300°C from Co catalysts by ACCVD

〇(M2)Takuya Okada¹, Kamal Sharma¹, Takahiro Saida¹, Shigeya Naritsuka¹, Takahiro Maruyama¹ (1.Meijo Univ.)

Keywords:Carbonnanotube

Since single-walled carbon nanotubes (SWCNTs) have various excellent electrical characteristics, they are expected to be applied to the electronics field. However, to realize that, it is a problem to lower the production temperature. In our group, SWCNT growth at about 300 ℃ is reported by using Rh particles loaded on Al₂O₃ buffer layer as catalyst and optimizing ethanol pressure. On the other hand, when Co catalyst was used, SWCNT growth at a growth temperature of 400 °C. was successful but yield was small. In this research, SWCNT growth at 300 °C or less was succeeded by introducing an Al₂O₃ buffer layer and optimizing growth conditions for the purpose of improving the growth amount of SWCNT from Co catalyst in low temperature growth.