[18p-PB3-1~95] 17 Nanocarbon Technology (Poster)

△ [18p-PB3-48] Negative Magnetoresistance of Helium-ion-irradiated Graphene

〇Takuya Iwasaki^1,2, Gabriel Agbonlahor², Manoharan Muruganathan², Masashi Akabori², Yoshifumi Morita³, Satoshi Moriyama¹, Shinichi Ogawa⁴, Yutaka Wakayama¹, Hiroshi Mizuta^2,5, Shu Nakaharai¹ (1.NIMS, 2.JAIST, 3.Gunma Univ., 4.AIST, 5.Hitachi Camb. Lab.)

Keywords:Graphene, Ion irradiation, Carrier localization

We report the carrier transport characteristics of graphene with defects introduced by helium ion irradiation by using the helium ion microscope. The measurements were conducted under a low temperature and a magnetic field. The negative magnetoresistance was observed at a temperature of 1.7 K for various gate voltage, and its change was larger near the Dirac point. From the measurement results, it is suggested that carrier localization due to quantum interference effect occurs in graphene with low density defects introduced by ion irradiation.