The 79th JSAP Autumn Meeting, 2018

Presentation information

Poster presentation

17 Nanocarbon Technology » 17 Nanocarbon Technology (Poster)

[18p-PB3-1~95] 17 Nanocarbon Technology (Poster)

Tue. Sep 18, 2018 4:00 PM - 6:00 PM PB (Shirotori Hall)

4:00 PM - 6:00 PM

[18p-PB3-82] NaCl-Assisted CVD Synthesis of WS2 Atomic Layers from H2S and WF6 Precursors

Mitsuhiro OKADA1, Naoya OKADA1, Wen Hsin Chang1, Atsushi ANDO1, Toshifumi IRISAWA1 (1.AIST)

Keywords:Transition metal dichalcogenides, CVD

The CVD growth method is commonly used for obtaining large-scale, atomic layered transition-metal dicalcogenides such as MoS2 and WS2. In a typical CVD growth method, solid powder precursors like metal oxide and elemental sulfur are used to obtain them. Since these precursors are solid, it is difficult to control their supply rate, leading to lowering reproducibility of CVD growth.
Here, we report the NaCl-assited CVD synthesis of WS2 atomic layers from H2S and WF6 precursors. These compounds are gas phase, and their supply rate can be precisely controlled by mass flow controller. With the assistance of NaCl, we succeeded to obtain WS2 atomic layers on SiO2/Si substrate from these gas phase precursors .