[18p-PB3-1~95] 17 Nanocarbon Technology (Poster)

[18p-PB3-83] Crystal growth of transition metal dichalcogenide with gas-source and halide-assist molecular beam epitaxy

〇Koki Terashima¹, Yuya Murai¹, Takato Hotta¹, Hisanori Shinohara¹, Ryo Kitaura¹ (1.Nagoya Univ.)

Keywords:molecular beam epitaxy, metalorganic source, halide assist

They are using thermal CVD method using solid materials as crystal growth of TMD atomic layer. But, there are problems regarding controllability and uniformity. So, application of molecular beam epitaxy (MBE) is being considered as better controllability crystal growth method. But, TMD crystal size with MBE is smaller than its size with CVD. Therefore, we tried following two. 1.MBE using metalorganic source (MetalOrganic MBE), 2.NaCl assist MBE (codeposition of NaCl molecular beam)