[19a-136-1~12] 13.9 Compound solar cells

[19a-136-8] Preparation of Cu₂Sn_1-xGe_xS₃ light-absorber layer utilizing diluted H₂S gas

〇Jun Kobayshi¹, Myo Than Htay¹, Noritaka Momose², Kentaro Ito¹, Yoshio Hashimoto¹ (1.Shinshu Univ., 2.NIT, Nagano Coll.)

Keywords:Cu2Sn1-xGexS3, light-absorber layer, thin film

The Cu₂Sn_1-xGe_xS₃(CTGS) compound can adjust the band gap energy in the range of 0.94 to 1.3 eV. It is expected as a light absorbing material for thin-film solar cells because of its high optical absorption coefficient (10^-4). Sulfurization method using diluted H₂S gas is a method that can be used for large area and mass production because of good controllability. In this research, attention is focused on the fabrication of a Cu₂Sn_1-xGe_xS₃ light absorbing layer using diluted H₂S gas, and the result of investigation on optimization of it is reported.