[19a-143-1~8] 6.6 Probe Microscopy

[19a-143-2] Measurements of element-specific signals by XANAM on a Ge surface

〇Shushi Suzuki¹, Shingo Mukai², Wang-Jae Chun³, Masaharu Nomura⁴, Kiyotaka Asakura² (1.Nagoya Univ., 2.Hokkaido Univ., 3.ICU, 4.KEK-PF)

Keywords:Synchrotron Radiation X-ray, Noncontact Atomic Force Microscopy, semiconductor

We have developed "X-ray Aided Atomic Force Microscopy (XANAM)" as a method to identify the elements with identifying individual nanostructures at a surface/interface. We investigated X-ray induced change in the tip-surface atomic force and proposed the method of obtaining element mapping by using a sample of Ni nanoparticles on HOPG. In this study, we applied this method to the Ge semiconductor sample. As well as the changes in the tip-surface force due to the X-rays, the information of the current change at the probe position could also be obtained. We report on the results of examining the relationship between these signals.