[19a-146-1~12] 15.4 III-V-group nitride crystals

[19a-146-11] Photoluminescence Properties of InN Nano-Crystals Grown on Graphite by MBE

〇Shinichiro Mouri¹, Shingo Arakawa¹, Darius Dobrovolskas², Juras Mickevicius², Gintautas Tamulaitis², Yasushi Nanishi¹, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.Vilnius Univ.)

Keywords:Indium nitride, van der Waals epitaxy, Graphene

We tried to grow removable and transferable InN by MBE using graphite as a sacrificial layer. We have found that transferable InN nanocrystals can be grown on the graphite. In this study, the relationship between the luminescence of nanocrystals and growth conditions was investigated using micro photoluminescence measurement. As a result, it was found that the emission intensity of the nanocrystals grown at 375 ° C. was stronger than that of thin film grown directory on the GaN template. This suggests that these crystals were promising as a light emitting material.