The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19a-146-1~12] 15.4 III-V-group nitride crystals

Wed. Sep 19, 2018 9:00 AM - 12:15 PM 146 (Reception Hall)

Kazunobu Kojima(Tohoku Univ.), Mitsuru Funato(Kyoto Univ.)

11:45 AM - 12:00 PM

[19a-146-11] Photoluminescence Properties of InN Nano-Crystals Grown on Graphite by MBE

Shinichiro Mouri1, Shingo Arakawa1, Darius Dobrovolskas2, Juras Mickevicius2, Gintautas Tamulaitis2, Yasushi Nanishi1, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.Vilnius Univ.)

Keywords:Indium nitride, van der Waals epitaxy, Graphene

We tried to grow removable and transferable InN by MBE using graphite as a sacrificial layer. We have found that transferable InN nanocrystals can be grown on the graphite. In this study, the relationship between the luminescence of nanocrystals and growth conditions was investigated using micro photoluminescence measurement. As a result, it was found that the emission intensity of the nanocrystals grown at 375 ° C. was stronger than that of thin film grown directory on the GaN template. This suggests that these crystals were promising as a light emitting material.