[19a-146-1~12] 15.4 III-V-group nitride crystals

[19a-146-4] - Laser Induced Ohmic Contact Formation(LOC) - Laser Induced Formation of Local Ohmic Contact on p-GaN

〇Teruhisa Kawasaki¹, Noriko Kurose², Kota Matsumoto³, Naotaka Iwata³, Yoshinobu Aoyagi² (1.Sumitomo Heavy Inds., 2.Ritsumeikan Univ., 3.Toyota Tech. Inst.)

Keywords:GaN, ohmic, laser

In the process of forming ohmic contact on p-type GaN (p-GaN), contact resistance usually can not be lowered unless the entire device is heated at high temperature for a long time by using RTA. Heating for a long time tends to cause deterioration of the element. This is a critical problem to realizing the characteristics (low loss, high breakdown voltage and high frequency operation) required for next generation semiconductors.Therefore, we developed a new method for formation of ohmic contact by locally irradiating a laser beam at wavelength of 355 nm onto Ni film deposited on p-GaN.By using this new method, there is a possibility that the p-GaN electrode formation process can be easily and quickly performed. In addition, it is possible to create electrodes locally for the device, or selectively form a Schottky electrode, an ohmic electrode, or the like. This opens up new possibilities for next generation semiconductors and One on Chip elements.