[19a-146-1~12] 15.4 III-V-group nitride crystals

△ [19a-146-5] Study of the dependence of GaN surface oxidation on the crystalline plane by in-situ XPS during O₂ molecular beam irradiation

〇Yuya Asai^1,2, Keisuke Seki^1,3, Akitaka Yoshigoe⁴, Masato Sumita⁵, Takamasa Ishigaki³, Akira Uedono², Masatomo Sumiya¹ (1.NIMS, 2.Univ. of Tsukuba, 3.Hosei Univ., 4.JAEA, 5.RIKEN AIP)

Keywords:oxidation, XPS

We observed the surface oxidation in real time by in-situ XPS irradiating O₂ molecular beam to +c, -c and m plane of GaN.We will discuss the result from the calculation model of polar surface and reveal the dependence of GaN surface oxidation on crystalline plane.