[19a-146-1~12] 15.4 III-V-group nitride crystals

[19a-146-9] Spatially resolved spectroscopy of potential barrier around V-pits in InGaN multiple quantum wells on moderate temperature GaN layers

〇Satoshi Kurai¹, Kohei Okawa¹, Ryoga Makio¹, Junji Gao¹, Genki Nobata¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoichi Yamada¹ (1.Yamaguchi Univ.)

Keywords:InGaN, potential barrier, nanoscopic spectroscopy