[19a-233-1~11] 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

▲ [19a-233-2] [Young Scientist Presentation Award Speech] Evaluation of Contact Resistivity of Ni(Ge_1-ySn_y)/Heavily Sb-doped n-Ge_1-xSn_x Contact

〇Jihee Jeon¹、Akihiro Suzuki^1,2、Kouta Takahashi^1,2、Osamu Nakatsuka^1,3、Shigeaki Zaima⁴ (1.Grad. Sc. of Eng., Nagoya Univ.、2.Research Fellow of JSPS、3.IMASS, Nagoya Univ.、4.IIFS, Nagoya Univ.)

キーワード：Contact Resistivity, GeSn, n-type doping