[19a-311-1~12] 17.3 Layered materials

[19a-311-4] Edge Termination Effect on Field-Effect Transistors Based on Multilayer MoS₂

〇(M1)Takuya Ohoka¹, Ryo Nouchi^1,2 (1.Osaka Pref. Univ., 2.JST-PRESTO)

Keywords:MoS2, field-effect transistor, edge termination

The electronic state localized at the edges of layered materials would be a detrimental factor for the operation of microscopic devices. In this study, we attempted to terminate the edges of MoS₂, which is an archetypal layered semiconductor, with a thiol molecule in order to reduce the edge states. We observed an increase in the on-current of MoS₂ field-effect transistors by the thiol edge termination, which shows a possible dependence on the edge structure of the MoS₂ crystal.