2018年第79回応用物理学会秋季学術講演会

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10 スピントロニクス・マグネティクス » 10.3 スピンデバイス・磁気メモリ・ストレージ技術

[19a-331-7~12] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

2018年9月19日(水) 10:45 〜 12:15 331 (国際会議室)

鈴木 和也(東北大)

11:45 〜 12:00

[19a-331-11] Origin of bi-quadratic interlayer exchange coupling in Co2MnSi-based pseudo spin valves

〇(M2)Daiki Mouri1、Masaki Inoue1、Kazuumi Inubushi2、Tessei Tanimoto1、Katsuyuki Nakada2、Masafumi Yamamoto1、Tetsuya Uemura1 (1.Hokkaido Univ.、2.TDK Corp.)

キーワード:GMR, Heusler alloys, Interlayer exchange coupling

We fabricated current-perpendicular-to-plane pseudo spin valves (CPP-PSVs) having Co2MnSi electrodes with various Mn compositions, α, and an Ag spacer, and investigated the strength of bi-quadratic interlayer exchange coupling (90° coupling) in the CPP-PSVs by comparing magnetoresistance characteristics and spin-transfer-torque induced magnetization switching characteristics. We experimentally found that (a) the strength of 90° coupling increased as α increased, (b) it was weakened by insertion of CoFe between CMS and the Ag spacer, resulting in the suppression of the 90° coupling at 290 K, and (c) it strongly depended on temperature. These results can be understood by the interpretation that loosely coupled spins due to Mn atoms diffused into an Ag spacer are the origin of 90° coupling.