[19a-331-1~6] 10.2 スピン基盤技術・萌芽的デバイス技術

▼ [19a-331-4] Spin-pump-induced spin transport in n-type 3C-SiC

〇Ei Shigematsu¹、Ryo Ohshima¹、Yuichiro Ando¹、Teruya Shinjo¹、Tsunenobu Kimoto¹、Masashi Shiraishi¹ (1.Kyoto Univ.)

キーワード：spintronics, Group-IV spintronics

3C-SiC consists of light elements (Si and C) and its crystal symmetry (zincblende) is the same as that of GaAs. Therefore, it allows a hybridized situation of Si and GaAs. In n-type conduction, these two materials have different spin relaxation mechanisms: the Elliott-Yafet type and the D’yakonov-Perel type. To unveil the spin relaxation physics in n-type 3C-SiC, a spin transport device using spin pumping was fabricated and we obtained a signal indicating spin transport thorough the 3C-SiC channel.