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13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[19a-436-1~8] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 19, 2018 9:30 AM - 11:45 AM 436 (436)

Takashi Suemasu(Univ. of Tsukuba), Hirokazu Tatsuoka(Shizuoka Univ.)

10:15 AM - 10:30 AM

[19a-436-4] Formation of Pd silicide on Si nanowire

〇Naoya Fujiwara¹, Yuma Okazaki¹, Takeshi Ishiyama¹ (1.Toyohashi Univ.)

Keywords:silicide