Challenges in SiO<sub>2</sub>/SiC interface passivation for SiC power MOSFET

Presentation information

Symposium (Oral)

Symposium » JSAP-KPS Joint Symposium: Wide Bandgap Semiconductor Devices

Wed. Sep 19, 2018 9:00 AM - 11:55 AM CE (Century Hall)

9:15 AM - 9:45 AM

〇Takuji Hosoi¹, Kidist Moges¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:SiC, SiO2/SiC interface, MOS