[19a-CE-1~6] 日韓ジョイントシンポ：ワイドバンドギャップ半導体デバイス

▲ [19a-CE-6] Investigation of Lightly Mg-Ion-Implanted GaN Using MOS Structure

〇Masamichi Akazawa¹、Kei Uetake¹、Ryo Kamoshida¹ (1.Hokkaido University)

キーワード：GaN, Mg, ion implantation

Mg-ion implantation is a promising technique for selectively forming a p-type region in GaN, which is useful for the mass production of high-power devices. However, the technology is not yet fully established completely. The annealing temperature required for acceptor activation is high (> 1200^oC), whereas the obtained activation ratio is frequently low. There is thus room for reappraisal of the annealing method. To address this issue, one should investigate the effect of annealing from a low temperature to a high temperature. In addition, to investigate the deep levels generated by implantation, one should start from a low dosage. We here present the results of a study on the effect of low-temperature annealing on lightly Mg-ion-implanted GaN.