[19p-131-1~15] 15.7 Crystal characterization, impurities and crystal defects

[19p-131-11] Measurement of low level carbon in silicon substrate using SIMS

〇Masumi Obuchi¹, Kazue Shingu¹, Larry Wang², Peter Zhao², Man Xu², Jing Guo², Hang Dong Lee^2,1 (1.NANO SCIENCE, 2.EAG)

Keywords:silicon, carbon impurity, SIMS

To meet the requirement of better than 1E15 atoms/cm³ detection limit for bulk Carbon in single crystal Si, we performed measurements using SIMS with raster change technique and demonstrated the reproducible results of mid E14 atoms/cm³ level Carbon bulk concentration in FZ Si.