High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(13) Shallow thermal donors, behavior and measurement

Naohisa Inoue; Shuichi Kawamata

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[19p-131-1~15] 15.7 Crystal characterization, impurities and crystal defects

Wed. Sep 19, 2018 1:30 PM - 5:45 PM 131 (131+132)

Kentaro Kutsukake(Nagoya Univ.), Toshinori Taishi(Shinshu Univ.), Yasuo Shimizu(Tohoku Univ.)

5:00 PM - 5:15 PM

[19p-131-13] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(13) Shallow thermal donors, behavior and measurement

〇Naohisa Inoue^1,2, Shuichi Kawamata² (1.Tokyo Univ. Agri. Technol, 2.Osaka Pref. Univ.)

Keywords:silicon crystal, nitrogen-point defect complex, infrared absorption

Local vibration modes of NO pairs were examined. By removing the absorption by NN pairs and oxygen, absorption lines due to NO, NOO, NOO₂ and ONO were found and identified. The sum of absorption coefficients of them gives the nitrogen concentration below 10^14 atoms/cm^3.