[19p-133-1~19] 6.1 Ferroelectric thin films

[19p-133-14] Control of Leakage Current through BaTiO₃ Film by Cumulative Cycle of Applied Voltage Scanning for Emerging Application

Ryoko Kobayashi¹, So Maejima¹, Kaoru Yamashita¹, 〇Minoru Noda¹ (1.Kyoto Inst. Tech.)

Keywords:BaTiO3, Resistive Change, Oxygen Vacancy

Leakage current through around 50 nm-thick BaTiO₃ film was investigated by cumulative cycle of applied voltage Scanning. From XPS results, several amount of oxygen vacancies were observed in neighbor of Pt bottom electrode interface, leading to obtained I-V characteristics indicating phenomena of electron injection from Pt electrode and trapping into the vacancies. After cumulative cycle of applied voltage scanning, several phenomena such as the electron emission from the trappied sites were considered. It is interesting whether it would be possible to make clear the characteristics and apply for high-density MLCC with ultrathin film of BaTiO₃-family and/or markedly low-power operation in neuromorphic synaptic devices.