The 79th JSAP Autumn Meeting, 2018

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19p-146-1~22] 15.4 III-V-group nitride crystals

Wed. Sep 19, 2018 1:15 PM - 7:15 PM 146 (Reception Hall)

Mark Holmes(The University of Tokyo), Jun Tatebayashi(Osaka Univ.), Tomoyuki Tanikawa(Tohoku Univ.)

4:15 PM - 4:30 PM

[19p-146-12] Influence of the nucleation conditions on the quality of AlN layers with high-temperature annealing and regrowth processes

〇Yuri Itokazu1,2, Shunsuke Kuwaba1,2, Masafumi Jo2, Norihiko Kamata1, Hideki Hirayama2 (1.Saitama Univ, 2.Riken)

Keywords:semiconductor, high temperature annealing, AlN