Effects of p-AlGaN layer thickness on the properties of deep-UV AlGaN LEDs

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Wed. Sep 19, 2018 1:15 PM - 7:15 PM 146 (Reception Hall)

Mark Holmes(The University of Tokyo), Jun Tatebayashi(Osaka Univ.), Tomoyuki Tanikawa(Tohoku Univ.)

2:30 PM - 2:45 PM

〇Shunsuke Kuwaba^1,2, Yuri Itokazu^1,2, Masafumi Jo², Norihiko Kamata¹, Hideki Hirayama² (1.Saiatama Univ., 2.Riken)

Keywords:semiconductor, deep ultra-violet