[19p-221A-1~18] 9.2 Nanowires and Nanoparticles

▲ [19p-221A-14] Investigation of Nanoscale Voids in Sb-Doped p-Type ZnO Nanowires

〇(PC)Ken Charles Pradel¹, Jun Uzuhashi¹, Toshiaki Takei¹, Tadakatsu Ohkubo¹, Kazuhiro Hono¹, Naoki Fukata¹ (1.NIMS)

Keywords:p-type ZnO, ZnO nanowires, nanoscale defects

While it has multiple advantageous optoelectronic and piezoelectric properties, application of zinc oxide has been limited by the lack of a stable p-type dopant. Recently, it was discovered that antimony doping can lead to stable p-type doping in ZnO, but one curious side effect of the doping process is the formation of voids inside the nanowire. While previously used as a signifier of successful doping, up until now, little research has been performed on these structures themselves. In this work, the effect of annealing on the size and microstructure of the voids was investigated using TEM and XRD, finding that the voids form around a region of Zn₇Sb₂O₁₂. Furthermore, using Raman spectroscopy, a new peak associated with successful doping was identified. The most surprising finding, however, was the presence of water trapped inside the nanowire, showing that this is actually a composite structure. Water was initially discovered in the nanowires using atom probe tomography, and verified using Raman spectroscopy. If water can be trapped in these nanowires, a limitless number of other water-soluble materials and chemicals can too, opening the possibility for further functionalization of this material.