[19p-221A-1~18] 9.2 Nanowires and Nanoparticles

[19p-221A-5] Temperature dependent characterization of InP nanowire LEDs

〇Junichi Motohisa¹, Hiroki Kameda¹, Masahiro Sasaki¹, Katsuhiro Tomioka¹ (1.Hokkaido Univ.)

Keywords:semicondutor nanowire, light emitting diode

We report on a detailed study on the emission mechanism of InP nanowire light emitting diodes (NW-LEDs) by using temperature dependent characterization. InP nanowire array with axial p-i-n structure was grown by grown by selective-area metalorganic vapor-phase epitaxy on a partially masked InP (111)A substrate. Temperature (T) dependence of current-voltage (I-V) characteristics of an NW-LED revealed anomalous increase of ideality factor when the temperature was lowered, indicating that current conduction was not dominated by a simple recombination in a pin structure. Temperature dependence of emission efficiency showed non-monotonous dependence on I and T, and was considered to be an interplay of nonradiative recombination and injection efficiency. Furthermore, emission spectra also showed complicated dependence on injection current and temperature, which was thought to be originated from mixing of crystal structure in InP nanowires.