[19p-221A-1~18] 9.2 Nanowires and Nanoparticles

[19p-221A-6] Electroluminescence characteristics of InP/InAsP nanowire LEDs

〇Tomoya Akamatsu¹, Hiroki Kameda¹, Masahiro Sasaki¹, Katsuhiro Tomioka¹, Junichi Motohisa¹ (1.Graduate School of IST and RCIQE, Hokkaido Univ.)

Keywords:nanowire, III-V compound semiconductor, light-emitting diode

Single photon sources are indispensable for quantum cryptography communication, and quantum dots are one of the candidates for on-demand single photon sources. Towards realization of single photon sources operating in telecommunication bands, we here report on the fabrication and characterization of light-emitting diodes (LEDs) using InP nanowires (NWs) with axial p-i-n junction and InAsP layer in i-InP, which were grown by selective-area metal organic vapor phase epitaxy. Electroluminescence from InAsP layer embedded in i-InP section of InP NW array were confirmed in near infrared region at room temperature.