[19p-221A-1~18] 9.2 Nanowires and Nanoparticles

△ [19p-221A-8] Formation of core-shell nanowire using passivation structure with GaAs/AlGaAs heterostructure and native-oxide AlGaOx outermost shell

〇Naoki Tsuda¹, Fumitaro Ishikawa¹ (1.Ehime Univ.)

Keywords:semiconductor, nanowire, GaAs

III-V compound semiconductor GaAs nanowire has a high luminous efficiency such that a single nanowire itself functions as a laser. On the other hand, the influence of surface nonradiative recombination is remarkable for the same material, and various attempts to suppress this have been made. In the fabrication of AlGaAs / GaAs core shell nanowires, we tried to naturally oxidize the AlGaAs layer and grow AlGaAs passivation layer inside nanowire. The results of evaluating the fabricated nanowire are reported.