[19p-224A-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-224A-2] TFT Characterization and Effects of Substrate in Al-doped ZnO Thin-Film Transistor by Solution Method

〇Kazuyori Oura¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹ (1.Osaka Inst. of Tech. NMRC)

Keywords:ZnO, solution method, TFT

In recent years, research on TFTs using oxide semiconductors has been extensively studied for the development of next generation displays. Among them, ZnO is a transparent material having a wide band gap, and research is actively conducted because of high electron mobility in the amorphous phase. For the purpose of forming an oxide device on a Si substrate and forming a high-quality thin film by a coating method, we fabricated TFT on Si substrate and a-plane sapphire substrate and evaluated its characteristics compared with the TFT on the glass substrate.