[19p-224A-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-224A-8] Carrier density in Ga-doped ZnO film and related crystalline defects after annealing

〇Yasuji Yamada¹, Yumika Yamada², Takumi Yamamoto³, Rei Sugiura³, Shuhei Funaki¹ (1.Shimane Unive., 2.Shimane Unive. 2, 3.Shimane Unive. 3)

Keywords:transparent conducting film, ZnO, crystalline defect

Ga doped ZnO (GZO) films that is intentionally enriched with Zn have been investigated to reveal the behavior of crystalline defects that governs the electrical properties of GZO films. Zn enriched films enhance carrier density and, therefore, nominal activity of Ga dopant. Zn addition in GZO film probably induces the reduction of the acceptor-like defect of V_Zn. The behavior that shows the creation of thermally equilibrated crystalline defects at high temperature has also been observed. The structure of grain boundaries seems to be modified at high temperatures to reduce carrier scattering according to the mobility increase after high temperature annealing independent of the amount and the change in carrier density.