[19p-231A-1~8] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[19p-231A-6] Crystals growth of GeTe nanowire by vapor growth method

〇(M2)Kazuki Nakaya¹, Yusuke Imanishi¹, Eita Yamaguchi¹, Toshihiro Nakaoka¹ (1.Sophia Univ.)

Keywords:nanowire, GeTe

GeTe nanowires are promising for enhancing the performances of the GeTe-based devices as phase change memory. And Ag-GeTe nanowire is expected for ECM memory and the platform of thermo-electric devices. We reported that we demonstrate GeTe nanowire growth using Ag nano-particle dispersion as the catalyst and the nanowires consist of rhombohedral GeTe crystal phase, and are grown by a catalyst-on-bottom mode. In this paper, we find GeTe nanowire grown from Ag film formed by electron beam deposition and RF magnetron sputtering.