[19p-233-1~12] Create a path of future semiconductor devices by new materials and processes

[19p-233-2] Electronic and Atomistic Swiching Mechanism of Future Emerging Memories

〇Kenji Shiraishi¹ (1.Nagoya Univ.)

Keywords:ReRAM, PCRAM, First Principles Calculations

We discuss the switching mechanism of future emerging memories from electronic and atomistic levels. We proposed that carrier injection was the trigger of ReRAM switching by collapsing O vacancy filament. This proposal was confirmed by the experiments by Kinoshita et al. Moreover, we show that this carrier injection mechanism can be applied to another emerging memory of superlattice PCRAM.