[19p-233-1~12] Create a path of future semiconductor devices by new materials and processes

[19p-233-6] Sputter-Deposited-MoS₂ nMISFETs with Top-Gate for Large Area Integration

〇(D)kentarou matsuura¹, Jun'ichi Shimizu¹, Mayato Toyama¹, Takumi Ohashi¹, Iriya Muneta¹, Seiya Ishihara², Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Atsushi Ogura², Hitoshi Wakabayashi¹ (1.Tokyotech, 2.Meiji Univ.)

Keywords:molybdenum disulfide, sputtering method, nMISFETs