The 79th JSAP Autumn Meeting, 2018

Presentation information

Symposium (Oral)

Symposium » Create a path of future semiconductor devices by new materials and processes

[19p-233-1~12] Create a path of future semiconductor devices by new materials and processes

Wed. Sep 19, 2018 1:30 PM - 5:50 PM 233 (233)

Akio Ohta(Nagoya Univ.), Noriyuki Taoka(AIST)

3:45 PM - 4:15 PM

[19p-233-7] Let’s think about a thermoelectric device supporting a smartwatch

Masashi Kurosawa1,2,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IAR, Nagoya Univ., 3.JST-PRESTO)

Keywords:thermoelectric device, GeSn, SiSn

本講演では、“エネルギーの墓場”とも言われている200℃以下の熱を利用したエネルギーハーベストについて考えたい。