[19p-233-1~12] Create a path of future semiconductor devices by new materials and processes

[19p-233-8] Ultra-low power tunnel transistors with oxide semiconductor and group-IV semiconductor

〇Kimihiko Kato¹, Hiroaki Matsui¹, Hitoshi Tabata¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

Keywords:tunnel FET, oxide semiconductor, group-IV semiconductor

Tunneling field effect transistors (TFET) attract much attention for ultra-low power switching devices recently. We are proposing a bilayer TFET structure, which consists of oxide semiconductor and group-IV semiconductor, to improve TFET performance. Type-II energy band alignment can be expected by utilizing low conduction band minimum of oxide semiconductor and high valence band maximum of group-IV semiconductor, and tunneling can be realized over the entire region of the tunneling junction in the bilayer structure. We will report high potential of the proposed TFET investigated by TCAD simulation and first experimental demonstration by using ZnO/Si and ZnO/Ge hetero tunneling junction.