[19p-233-1~12] Create a path of future semiconductor devices by new materials and processes

[19p-233-9] Ultra-sharp Switching by Using Non-equilibrium State in VO₂ Phase Transition Transistors

〇Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.Univ. of Tokyo)

Keywords:VO2, metal-insulator transition, first-order phase transition

It is often expected the ultra-sharp switching devices could be fabricated by exploitating the first-order phase transition in materials. In practice, however, such an ultra-sharp switching is hindered by the two-phase coexisting state, leading to a mere concinous change of macroscopic physical properties. Here, we propose an ultra-sharp switching can be recovered by applying non-equilibrium stress with finite energy dissipation, which is experimentally verified in a VO₂-channel phase transition transistor.