The 79th JSAP Autumn Meeting, 2018

Presentation information

Symposium (Oral)

Symposium » Trend of van der Waals heterosturctured devices

[19p-311-1~8] Trend of van der Waals heterosturctured devices

Wed. Sep 19, 2018 1:30 PM - 5:15 PM 311 (Cascade)

Atsushi Ando(AIST), Keiji Ueno(Saitama Univ.)

2:00 PM - 2:30 PM

[19p-311-2] hBN, Insulating materials in van der Waals heterostructure

Takashi Taniguchi1 (1.NIMS)

Keywords:Hexagonal boron nitride, High pressure crystals growth

Hexagonal boron nitride (hBN) single crystal is now utilized as an insulating material for van der Waals heterostructures. High carrier mobility performance of graphene device was exhibited by using hBN substrate with optimized electrode. The mobility at low temperature is however affected by some scattering effect probably due to residual defect in hBN. In this report, recent study on high pressure synthesis of hBN crystals and their impurity control will be introduced.