[19p-311-1~8] Trend of van der Waals heterosturctured devices

[19p-311-2] hBN, Insulating materials in van der Waals heterostructure

〇Takashi Taniguchi¹ (1.NIMS)

Keywords:Hexagonal boron nitride, High pressure crystals growth

Hexagonal boron nitride (hBN) single crystal is now utilized as an insulating material for van der Waals heterostructures. High carrier mobility performance of graphene device was exhibited by using hBN substrate with optimized electrode. The mobility at low temperature is however affected by some scattering effect probably due to residual defect in hBN. In this report, recent study on high pressure synthesis of hBN crystals and their impurity control will be introduced.