The 79th JSAP Autumn Meeting, 2018

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[19p-436-1~17] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 19, 2018 1:45 PM - 6:45 PM 436 (436)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.), Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

4:30 PM - 4:45 PM

[19p-436-10] Synthesis of a new nitride-semiconductor, Ca(Mg1-xZnx)2N2 (x = 0 - 1)

〇(M2)Masatake Tsuji1, Hidenori Hiramatsu1,2, Hideo Hosono1,2 (1.MSL Tokyo Tech, 2.MCES Tokyo Tech)

Keywords:Semiconductor, Nitride, Light Emitting Diode