The 79th JSAP Autumn Meeting, 2018

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[19p-436-1~17] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 19, 2018 1:45 PM - 6:45 PM 436 (436)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.), Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

5:00 PM - 5:15 PM

△ [19p-436-12] The generation of spin current in semiconducting FeSi2 at room temperature

〇Kenichiro Sakai1, Hiroki Ishimoto2, Yuki Asai2, Kazuya Ishibashi2, Tetsuo Tabei3, Masahiko Nishijima4, Tsuyoshi Yoshitake2 (1.NIT, Kurume Coll., 2.Kyushu Univ., 3.Hiroshima Univ., 4.Tohoku Univ.)

Keywords:semiconducting FeSi2, spintronics, spin current