Doping of Bi into Si crystal in an implantation way

Kazushi Miki; Atsuo Kawasuso; Masaki Maekawa; Hiroo Tajiri; Naohisa Happo; Ang Artoni Kevin Roquero; Koichi Hayashi

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[19p-436-1~17] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 19, 2018 1:45 PM - 6:45 PM 436 (436)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.), Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

5:45 PM - 6:00 PM

[19p-436-14] Doping of Bi into Si crystal in an implantation way

〇Kazushi Miki¹, Atsuo Kawasuso², Masaki Maekawa², Hiroo Tajiri³, Naohisa Happo⁴, Ang Artoni Kevin Roquero⁵, Koichi Hayashi⁵ (1.Univ. Hyogo, 2.QST-Takasaki, 3.JASRI, 4.Hiroshima Citi Univ., 5.NITech)

Keywords:silicon, dopant, ion implantation

We report our preliminary investigation, with positron annihilation method, of optimisation of post anneal process of Si:Bi samples made in an ion implantation.