[19p-436-1~17] 13.2 Exploratory Materials, Physical Properties, Devices

[19p-436-16] Electron paramagnetic resonance lines of a-axis-epitaxial BaSi₂ thin-film

〇Takuma Sato^1,2, Serge Gambarelli², Yudai Yamashita¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Univ. Grenoble Alps, CEA, CNRS, INAC-SyMMES)

Keywords:semiconductor, thin-film solar cells, electron paramagnetic resonance

We have paid an special attention to BaSi₂ for solar cells application. BaSi₂ thin-films possess a suitable bandgap, a high absorption coeffience and good minority-carrer properties, which allow for high convertion efficiency. Indeed, in the case of p-BaSi₂/n-Si hetero-junction solar cell, we reported that the efficiency reached 9.9% which is the best value among silicides as long as we know. In the aim of attain further efficiency, higher-quality of films is required. Therefore, we employed electron pramagnetic resonance (EPR) for BaSi₂ films to detect points defects inside the films. EPR is known as a powerful tool to investigate defects, for instance, dongling-bond in Si. In this talk, we are to discuss EPR lines we observed and a origin of the lines.